VDMOSFET, fully named Vertical Double-diffused Metal Oxide Semiconductor Field Effect Transistor, features high input impedance, fast switching speed, and good thermal stability. It also has a positive temperature coefficient and excellent current self-regulation ability.
Advantages and Features of Wayon VDMOS Products
In VDMOSFET design, Wayon focuses on optimizing the contradiction between breakdown voltage and on-resistance, enhancing breakdown voltage while maintaining low on-resistance, and reducing Qg and switching losses. Wayon VDMOSFET improves avalanche tolerance through optimized design, broadens the safe operating area, and thus enhances versatility and durability. For high-reliability applications such as industrial control, Wayon developed a high-quality silicon nitride passivation layer process that significantly improves device reliability.
Figure 1: Wafer Structure Diagram
Figure 2: Wafer Passivation Improving Reliability
Leveraging Wayon's mature power and industrial control customer base, Wayon has developed VDMOSFET products ranging from 200V to 1500V, covering currents from 2A to 40A, and including packages such as TO-251, TO-252, TO-262, TO-220/F, TO-247, TO-3PF, and others.
Figure 3: Wayon VDMOS Roadmap
Figure 4: Wayon VDMOS Mass Production Specifications
Figure 5: Wayon VDMOS Packaging
VDMOS is widely used in various fields, including adapters, LED driver power supplies, TV power supplies, industrial control, motor speed control, audio amplification, high-frequency oscillators, uninterruptible power supplies, energy-saving lamps, inverters, and more.
Figure 6: VDMOS Application Industries
Typical Applications of Wayon VDMOS
1. Application in Adapters (Switching Power Supplies)
2. Application in High-Speed Hair Dryers (BLDC Drives)
enhancing energy efficiency. In the future, Wayon will combine customer applications to develop more new VDMOS specifications and packaging, such as high-voltage 300V, 400V fast recovery series, and other specifications, providing customers with more options to achieve the best combination of efficiency, power density, and reliability in high-performance, high-reliability application scenarios.