Wayon’s SiC MOSFET has a higher switching frequency,
very low switching losses,
improves the
power conversion efficiency of the system and
reduces the heat dissipation requirements of the
thermal cycle, and with IGBT-compatible driving voltage, fully controllable
dv/dt, high blocking voltage with low on-resistance, fast intrinsic diode with
low reverse recovery, temperature independent turn-off switching losses,
Halogen free, RoHS compliant. Mainly applicable to: PV inverter, energy
storage, industrial power supply, motor drive, charging pile and other fields.
